Construct · 1 fields · 1 citations

ballistic MOSFET model: a standalone construct

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Microelectronics and semiconductor devices

a model of a transistor whose carriers cross the channel without scattering, giving the upper limit of drive current set by injection from the source.

In microelectronics and semiconductor devices, ballistic MOSFET model refers to a model of a transistor whose carriers cross the channel without scattering, giving the upper limit of drive current set by injection from the source. This meaning comes from Natori (1994) in Journal of Applied Physics.[1]

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Nearby constructs

ballistic2 fields · 2 citationsjingle · one word, two constructs channel4 fields · 4 citationsjingle · one word, four constructs current3 fields · 6 citationsjingle · one word, three constructs

References

Natori, K. (1994). Ballistic metal-oxide-semiconductor field effect transistor. Journal of Applied Physics, 76(8), 4879-4890. https://doi.org/10.1063/1.357263

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