Construct · 1 fields · 1 citations

band anticrossing model: a standalone construct

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Semiconductor physics

a model in which a localized impurity level, such as nitrogen in GaAs, repels the host conduction band and causes strong band-gap bowing.

In semiconductor physics, band anticrossing model refers to a model in which a localized impurity level, such as nitrogen in GaAs, repels the host conduction band and causes strong band-gap bowing. This meaning comes from Shan (1999) in Physical Review Letters.[1]

Unit
Recovery means
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Nearby constructs

band2 fields · 2 citationsjingle · one word, two constructs host2 fields · 2 citationsjingle · one word, two constructs level1 fields · 1 citationsanchor · a standalone construct

References

Shan, W., Walukiewicz, W., Ager, J. W., Haller, E. E., Geisz, J. F., Friedman, D. J., Olson, J. M., & Kurtz, S. R. (1999). Band Anticrossing in GaInNAs Alloys. Physical Review Letters, 82(6), 1221-1224. https://doi.org/10.1103/physrevlett.82.1221

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