Construct · 1 fields · 1 citations

BSIM: a standalone construct

One name. One construct. A landmark on the map.

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BSIM1 CONSTRUCTBSIMSHEU · MICROELECTRONICS AND

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Microelectronics and semiconductor devices

a physics-based compact model of short-channel MOS transistors used to predict device currents and charges in circuit simulation.

In microelectronics and semiconductor devices, BSIM refers to a physics-based compact model of short-channel MOS transistors used to predict device currents and charges in circuit simulation. This meaning comes from Sheu (1987) in IEEE Journal of Solid-State Circuits.[1]

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Nearby constructs

circuit1 fields · 1 citationsanchor · a standalone constructmodel3 fields · 3 citationsjingle · one word, three constructs

References

  1. Sheu, B. J., Scharfetter, D. L., Ko, P. -., & Jeng, M. -. (1987). BSIM: Berkeley short-channel IGFET model for MOS transistors. IEEE Journal of Solid-State Circuits, 22(4), 558-566. https://doi.org/10.1109/jssc.1987.1052773

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