Construct · 1 fields · 1 citations

Deal-Grove model: a standalone construct

One name. One construct. A landmark on the map.

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Thin films and interfaces

a model of silicon thermal oxidation with linear kinetics limited by interface reaction for thin oxides and parabolic kinetics limited by diffusion for thick oxides.

In thin films and interfaces, Deal-Grove model refers to a model of silicon thermal oxidation with linear kinetics limited by interface reaction for thin oxides and parabolic kinetics limited by diffusion for thick oxides. This meaning comes from Deal (1965) in Journal of Applied Physics.[1]

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Nearby constructs

diffusion6 fields · 12 citationsjingle · one name, six constructs interface2 fields · 2 citationsjingle · one word, two constructs model3 fields · 3 citationsjingle · one word, three constructs

References

Deal, B. E., & Grove, A. S. (1965). General Relationship for the Thermal Oxidation of Silicon. Journal of Applied Physics, 36(12), 3770-3778. https://doi.org/10.1063/1.1713945

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