Construct · 1 fields · 1 citations

doping limit rule: a standalone construct

One name. One construct. A landmark on the map.

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dopinglimit rule1 CONSTRUCTDoping limit ruleZHANG · SEMICONDUCTOR

A single standalone construct; nearby constructs are located against it in the Collider. Tap a field for its definition, unit, and measures.

Semiconductor materials

the rule that a semiconductor can be doped n-type or p-type only until the Fermi level reaches material-independent pinning energies set by spontaneously formed compensating defects.

In semiconductor materials, doping limit rule refers to the rule that a semiconductor can be doped n-type or p-type only until the Fermi level reaches material-independent pinning energies set by spontaneously formed compensating defects. This meaning comes from Zhang (1998) in Journal of Applied Physics.[1]

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Nearby constructs

doping3 fields · 4 citationsjingle · one word, three constructslevel1 fields · 1 citationsanchor · a standalone constructlimit3 fields · 3 citationsjingle · one word, three constructs

References

  1. Zhang, S. B., Wei, S., & Zunger, A. (1998). A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compounds. Journal of Applied Physics, 83(6), 3192-3196. https://doi.org/10.1063/1.367120

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