Construct · 1 fields · 1 citations

gradual channel approximation: a standalone construct

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Electronics

assumption in field-effect transistor theory that the field along the channel changes much more slowly than the field across it, so channel charge follows a one-dimensional analysis.

In electronics, gradual channel approximation refers to assumption in field-effect transistor theory that the field along the channel changes much more slowly than the field across it, so channel charge follows a one-dimensional analysis. This meaning comes from Shockley (1952) in Proceedings of the IRE.[1]

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Nearby constructs

channel4 fields · 4 citationsjingle · one word, four constructs charge1 fields · 2 citationsanchor · a standalone construct field3 fields · 5 citationsjingle · one word, three constructs

References

Shockley, W. (1952). A Unipolar "Field-Effect" Transistor. Proceedings of the IRE, 40(11), 1365-1376. https://doi.org/10.1109/jrproc.1952.273964

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