Construct · 1 fields · 1 citations

high-electron-mobility transistor: a standalone construct

One name. One construct. A landmark on the map.

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high-electron-mobilitytransistor1 CONSTRUCTHigh-electron-mobilityMIMURA · SEMICONDUCTOR DEVICES

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Semiconductor devices

a field-effect transistor using a heterojunction to form a high-mobility electron channel separated from its dopants.

In semiconductor devices, high-electron-mobility transistor refers to a field-effect transistor using a heterojunction to form a high-mobility electron channel separated from its dopants. This meaning comes from Mimura (1980) in Japanese Journal of Applied Physics.[1]

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Nearby constructs

channel4 fields · 4 citationsjingle · one word, four constructsform4 fields · 7 citationsjingle · one word, four constructs

References

  1. Mimura, T., Hiyamizu, S., Fujii, T., & Nanbu, K. (1980). A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions. Japanese Journal of Applied Physics, 19(5), L225. https://doi.org/10.1143/jjap.19.l225

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