Construct · 1 fields · 1 citations

modulation doping: a standalone construct

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Semiconductor physics

placing dopants in a barrier layer next to the conducting channel so carriers move without scattering off their parent ions, raising mobility.

In semiconductor physics, modulation doping refers to placing dopants in a barrier layer next to the conducting channel so carriers move without scattering off their parent ions, raising mobility. This meaning comes from Dingle (1978) in Applied Physics Letters.[1]

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Nearby constructs

barrier layer1 fields · 1 citationsanchor · a standalone construct barrier4 fields · 7 citationsjingle · one word, four constructs channel4 fields · 4 citationsjingle · one word, four constructs

References

Dingle, R., Störmer, H. L., Gossard, A. C., & Wiegmann, W. (1978). Electron mobilities in modulation-doped semiconductor heterojunction superlattices. Applied Physics Letters, 33(7), 665-667. https://doi.org/10.1063/1.90457

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