Construct · 1 fields · 1 citations

Pao-Sah model: a standalone construct

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Semiconductor device physics

a MOSFET current model that includes both drift and diffusion along the channel, valid continuously from weak to strong inversion.

In semiconductor device physics, Pao-Sah model refers to a MOSFET current model that includes both drift and diffusion along the channel, valid continuously from weak to strong inversion. This meaning comes from Pao (1966) in Solid-State Electronics.[1]

Unit
Recovery means
Measured by

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Nearby constructs

channel4 fields · 4 citationsjingle · one word, four constructs current3 fields · 6 citationsjingle · one word, three constructs diffusion6 fields · 12 citationsjingle · one name, six constructs

References

Pao, H. C., & Sah, C. T. (1966). Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors. Solid-State Electronics, 9(10), 927-937. https://doi.org/10.1016/0038-1101(66)90068-2

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