Construct · 1 fields · 1 citations

random dopant fluctuation: a standalone construct

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Semiconductor device physics

device-to-device variation in threshold voltage caused by the random number and placement of dopant atoms in very small transistors.

In semiconductor device physics, random dopant fluctuation refers to device-to-device variation in threshold voltage caused by the random number and placement of dopant atoms in very small transistors. This meaning comes from Asenov (1998) in IEEE Transactions on Electron Devices.[1]

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Nearby constructs

fluctuation4 fields · 7 citationsjingle · one word, four constructs number3 fields · 6 citationsjingle · one word, three constructs threshold5 fields · 6 citationsjingle · one word, five constructs

References

Asenov, A. (1998). Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study. IEEE Transactions on Electron Devices, 45(12), 2505-2513. https://doi.org/10.1109/16.735728

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