Construct · 1 fields · 1 citations

subthreshold swing: a standalone construct

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subthresholdswing1 CONSTRUCTSubthreshold swingSWANSON · MICROELECTRONICS AND

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Microelectronics and semiconductor devices

the gate voltage change needed to change MOSFET drain current tenfold below threshold, bounded near 60 millivolts per decade at room temperature.

In microelectronics and semiconductor devices, subthreshold swing refers to the gate voltage change needed to change MOSFET drain current tenfold below threshold, bounded near 60 millivolts per decade at room temperature. This meaning comes from Swanson (1972) in IEEE Journal of Solid-State Circuits.[1]

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Nearby constructs

current3 fields · 6 citationsjingle · one word, three constructsgate5 fields · 6 citationsjingle · one word, five constructsnegative capacitance1 fields · 1 citationsanchor · a standalone construct

References

  1. Swanson, R. M., & Meindl, J. D. (1972). Ion-implanted complementary MOS transistors in low-voltage circuits. IEEE Journal of Solid-State Circuits, 7(2), 146-153. https://doi.org/10.1109/jssc.1972.1050260

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