Construct · 1 fields · 1 citations

transient enhanced diffusion: a standalone construct

One name. One construct. A landmark on the map.

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transientenhanced diffusion1 CONSTRUCTTransient enhancedEAGLESHAM · MICROELECTRONICS

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Microelectronics and semiconductor devices

a temporary, strongly accelerated diffusion of dopants such as boron after ion implantation, driven by excess silicon interstitials from implant damage.

In microelectronics and semiconductor devices, transient enhanced diffusion refers to a temporary, strongly accelerated diffusion of dopants such as boron after ion implantation, driven by excess silicon interstitials from implant damage. This meaning comes from Eaglesham (1994) in Applied Physics Letters.[1]

Unit
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Nearby constructs

diffusion6 fields · 12 citationsjingle · one name, six constructstransient3 fields · 3 citationsinvariant · one construct, three systems

References

  1. Eaglesham, D. J., Stolk, P. A., Gossmann, H. -., & Poate, J. M. (1994). Implantation and transient B diffusion in Si: The source of the interstitials. Applied Physics Letters, 65(18), 2305-2307. https://doi.org/10.1063/1.112725

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