Construct · 1 fields · 1 citations

vertical tunneling transistor: a standalone construct

One name. One construct. A landmark on the map.

● anchor · a standalone construct Nearest construct by meaning·not indexed

A single standalone construct; nearby constructs are located against it in the Collider. Tap a field for its definition, unit, and measures.

Semiconductor devices

a transistor in which current tunnels vertically through a thin barrier between graphene electrodes and the gate tunes the tunneling.

In semiconductor devices, vertical tunneling transistor refers to a transistor in which current tunnels vertically through a thin barrier between graphene electrodes and the gate tunes the tunneling. This meaning comes from Britnell (2012) in Science.[1]

Unit
Recovery means
Measured by

Run it through the Collider, or take the citations with you.

See how vertical tunneling transistor sits against neighbouring constructs in the Collider, or export every reference on this page in one click.

Open in Collider Export BibTeX Report this entry

Nearby constructs

barrier4 fields · 7 citationsjingle · one word, four constructs current3 fields · 6 citationsjingle · one word, three constructs gate5 fields · 6 citationsjingle · one word, five constructs

References

Britnell, L., Gorbachev, R. V., Jalil, R., Belle, B. D., Schedin, F., Mishchenko, A., Georgiou, T., Katsnelson, M. I., Eaves, L., Morozov, S. V., Peres, N. M. R., Leist, J., Geim, A. K., Novoselov, K. S., & Ponomarenko, L. A. (2012). Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures. Science, 335(6071), 947-950. https://doi.org/10.1126/science.1218461

Cited on this page?

Confirm your construct, or correct us.

If your work is cited behind one of these entries, you know better than we do whether we captured the meaning right. Confirm it, suggest an edit, or dispute it, and your name goes on the entry as an author who has checked it, linked to your ORCID.

Claim your construct