Construct · 1 fields · 1 citations

drain-induced barrier lowering: a standalone construct

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Semiconductor devices

the lowering of a short-channel transistor's source barrier by drain voltage, raising leakage and lowering threshold voltage.

In semiconductor devices, drain-induced barrier lowering refers to the lowering of a short-channel transistor's source barrier by drain voltage, raising leakage and lowering threshold voltage. This meaning comes from Troutman (1979) in IEEE Journal of Solid-State Circuits.[1]

Unit
Recovery means
Measured by

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Nearby constructs

barrier4 fields · 7 citationsjingle · one word, four constructs leakage3 fields · 4 citationsjingle · one word, three constructs raising1 fields · 1 citationsanchor · one construct, one field

References

Troutman, R. R. (1979). VLSI limitations from drain-induced barrier lowering. IEEE Journal of Solid-State Circuits, 14(2), 383-391. https://doi.org/10.1109/jssc.1979.1051189

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