Construct · 1 fields · 1 citations

gate-induced drain leakage: a standalone construct

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Semiconductor device physics

off-state leakage current in a MOSFET produced by band-to-band tunneling in the drain region under the gate edge, a limit on scaling.

In semiconductor device physics, gate-induced drain leakage refers to off-state leakage current in a MOSFET produced by band-to-band tunneling in the drain region under the gate edge, a limit on scaling. This meaning comes from Chan (1987) in 1987 International Electron Devices Meeting.[1]

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band-to-band tunneling1 fields · 1 citationsanchor · a standalone construct current3 fields · 6 citationsjingle · one word, three constructs edge5 fields · 5 citationsjingle · one word, five constructs

References

Chan, T. Y., Chen, J., Ko, P. K., & Hu, C. (1987). The impact of gate-induced drain leakage current on MOSFET scaling. 1987 International Electron Devices Meeting. https://doi.org/10.1109/iedm.1987.191531

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