Construct · 1 fields · 1 citations

Lundstrom backscattering model: a standalone construct

One name. One construct. A landmark on the map.

● anchor · a standalone construct Nearest construct by meaning·not indexed
Lundstrombackscattering model1 CONSTRUCTLundstrom backscatteringLUNDSTROM · MICROELECTRONICS

A single standalone construct; nearby constructs are located against it in the Collider. Tap a field for its definition, unit, and measures.

Microelectronics and semiconductor devices

a model expressing nanoscale MOSFET current as the ballistic limit reduced by the fraction of carriers scattered back to the source near the injection point.

In microelectronics and semiconductor devices, Lundstrom backscattering model refers to a model expressing nanoscale MOSFET current as the ballistic limit reduced by the fraction of carriers scattered back to the source near the injection point. This meaning comes from Lundstrom (1997) in IEEE Electron Device Letters.[1]

Unit
Recovery means
Measured by

Next

Run it through the Collider, or take the citations with you.

See how Lundstrom backscattering model sits against neighbouring constructs in the Collider, or export every reference on this page in one click.

Open in ColliderExport BibTeXReport this entry

Nearby constructs

MOSFET backscattering model1 fields · 1 citationsanchor · a standalone constructballistic limit velocity1 fields · 1 citationsanchor · a standalone constructballistic2 fields · 2 citationsjingle · one word, two constructs

References

  1. Lundstrom, M. (1997). Elementary scattering theory of the Si MOSFET. IEEE Electron Device Letters, 18(7), 361-363. https://doi.org/10.1109/55.596937

Cited on this page?

Confirm your construct, or correct us.

If your work is cited behind one of these entries, you know better than we do whether we captured the meaning right. Confirm it, suggest an edit, or dispute it, and your name goes on the entry as an author who has checked it, linked to your ORCID.

Claim your construct