Construct · 1 fields · 1 citations

MOSFET backscattering model: a standalone construct

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MOSFETbackscattering model1 CONSTRUCTMOSFET backscatteringLUNDSTROM · SEMICONDUCTOR

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Semiconductor device physics

a model of nanoscale transistor current set by the fraction of carriers injected at the source that scatter back rather than cross the channel.

In semiconductor device physics, MOSFET backscattering model refers to a model of nanoscale transistor current set by the fraction of carriers injected at the source that scatter back rather than cross the channel. This meaning comes from Lundstrom (1997) in IEEE Electron Device Letters.[1]

Unit
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Measured by

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Lundstrom backscattering model1 fields · 1 citationsanchor · a standalone constructchannel4 fields · 4 citationsjingle · one word, four constructscurrent3 fields · 6 citationsjingle · one word, three constructs

References

  1. Lundstrom, M. (1997). Elementary scattering theory of the Si MOSFET. IEEE Electron Device Letters, 18(7), 361-363. https://doi.org/10.1109/55.596937

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