Construct · 2 fields · 3 citations
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In crystal growth and thin-film epitaxy, misfit is the fractional mismatch between the lattice spacings of a film and the substrate it grows on, which strains the film elastically until, above a critical thickness, the strain is relieved by misfit dislocations at the interface. Frank and van der Merwe's 1949 One-dimensional dislocations gave the first theory of how such a mismatched overlayer accommodates the misfit, and Matthews and Blakeslee's 1974 Defects in epitaxial multilayers set the critical thickness at which misfit dislocations appear. The referent is the lattice mismatch strain at an epitaxial interface, measured as a misfit fraction and a critical thickness, and it anchors how strained semiconductor and oxide layers are engineered.[1][2]
In design theory, misfit refers to a mismatch between a form and its context; design proceeds by removing misfits. This meaning comes from Alexander (1964) in Notes on the synthesis of form.[3]
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