Construct · 1 fields · 1 citations

negative bias temperature instability: a standalone construct

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Semiconductor devices

a gradual shift in threshold voltage of p-channel transistors under negative gate bias at elevated temperature.

In semiconductor devices, negative bias temperature instability refers to a gradual shift in threshold voltage of p-channel transistors under negative gate bias at elevated temperature. This meaning comes from Schroder (2003) in Journal of Applied Physics.[1]

Unit
Recovery means
Measured by

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Nearby constructs

bias6 fields · 8 citationsjingle · one name, six constructs gate5 fields · 6 citationsjingle · one word, five constructs instability3 fields · 3 citationsjingle · one word, three constructs

References

Schroder, D. K., & Babcock, J. A. (2003). Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing. Journal of Applied Physics, 94(1), 1-18. https://doi.org/10.1063/1.1567461

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