Construct · 2 fields · 3 citations

Where does pinch-off collide?

One name. Different field. Different construct. One map.

● jingle · one word, two constructs Nearest construct by meaning·not indexed
pinch-off2 CONSTRUCTSChannel pinch-offSHOCKLEY · FET PINCHDroplet pinch-offEGGERS · DROPLET

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2026

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Semiconductor devices

The FET channel narrows to zero at the drain

In a field-effect transistor, pinch-off is the condition in which the conducting channel narrows to vanishing near the drain because the gate-to-channel voltage there falls below threshold, after which the drain current stops rising with drain voltage and the device enters saturation. Shockley's 1952 A unipolar “field-effect” transistor introduced the mechanism, and Sze and Ng's Physics of semiconductor devices gives the standard account of the pinch-off voltage and the saturated current. The referent is the voltage condition that saturates a FET, defined by the pinch-off (or threshold) voltage, a distinct construct from a liquid thread snapping in two, sharing only the image of a cross-section pinched shut.[1][2]

Unit
The pinch-off voltage at which the channel saturates the drain current
Recovery means
Not applicable
Measured by
Read from output I–V characteristics as the onset of current saturation, giving the pinch-off (threshold) voltage

Fluid dynamics

A liquid thread thins to a point and breaks

In fluid dynamics, pinch-off is the moment a liquid thread or drop necks down to zero radius and separates, a finite-time singularity where surface tension drives the neck to collapse in a self-similar way independent of the initial conditions. Eggers's 1997 Nonlinear dynamics and breakup of free-surface flows is the authoritative account of this singular breakup and its universal scaling. The referent is the capillary breakup of a fluid interface, characterised by the self-similar thinning of the neck radius toward the singular instant, a different construct from a transistor channel closing, joined only by the shared word.[3]

Unit
The neck radius as it thins to zero at the breakup singularity
Recovery means
Not applicable
Measured by
Captured by high-speed imaging of the thinning neck and fitted to the self-similar scaling of radius versus time to breakup

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Nearby collisions

channel4 fields · 4 citationsjingle · one word, four constructscollapse4 fields · 5 citationsjingle · one word, four constructscondition2 fields · 2 citationsjingle · one word, two constructs

References

  1. Shockley, W. (1952). A unipolar “field-effect” transistor. Proceedings of the IRE, 40(11), 1365–1376. https://doi.org/10.1109/JRPROC.1952.273964
  2. Sze, S. M., & Ng, K. K. (2007). Physics of semiconductor devices (3rd ed.). John Wiley & Sons. ISBN 9780471143239
  3. Eggers, J. (1997). Nonlinear dynamics and breakup of free-surface flows. Reviews of Modern Physics, 69(3), 865–929. https://doi.org/10.1103/RevModPhys.69.865

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