Construct · 1 fields · 1 citations

static noise margin: a standalone construct

One name. One construct. A landmark on the map.

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staticnoise margin1 CONSTRUCTStatic noise marginSEEVINCK · MICROELECTRONICS

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Microelectronics and semiconductor devices

the largest static noise voltage an SRAM cell or latch can tolerate before flipping state, read from the largest square inside its butterfly curves.

In microelectronics and semiconductor devices, static noise margin refers to the largest static noise voltage an SRAM cell or latch can tolerate before flipping state, read from the largest square inside its butterfly curves. This meaning comes from Seevinck (1987) in IEEE Journal of Solid-State Circuits.[1]

Unit
Recovery means
Measured by

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Nearby constructs

cell2 fields · 3 citationsjingle · one word, two constructslatch3 fields · 4 citationsjingle · one word, three constructsmargin2 fields · 2 citationsjingle · one word, two constructs

References

  1. Seevinck, E., List, F. J., & Lohstroh, J. (1987). Static-noise margin analysis of MOS SRAM cells. IEEE Journal of Solid-State Circuits, 22(5), 748-754. https://doi.org/10.1109/jssc.1987.1052809

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