Construct · 1 fields · 1 citations

fin: a standalone construct

One name. One construct. A landmark on the map.

● anchor · a standalone construct Nearest construct by meaning·not indexed
fin1 CONSTRUCTFinFET finHISAMOTO · FINFET

A single standalone construct; nearby constructs are located against it in the Collider. Tap a field for its definition, unit, and measures.

Semiconductor devices

A thin upright silicon body wrapped by the gate

In device engineering the fin is the thin, upright ridge of silicon that forms the body of a FinFET, a transistor in which the gate wraps over the fin on three sides so it controls the channel far better than a flat planar gate can. Hisamoto and colleagues' 2000 FinFET—a self-aligned double-gate MOSFET scalable to 20 nm established the geometry that now dominates advanced logic. The referent is a transistor's conducting body shaped as a narrow vertical blade, characterised by fin height, width, and pitch; it is named by loose analogy to a fish's fin but a wholly different thing from a swimming surface or a heat-dissipating vane.[1]

Unit
Fin height, width, and pitch that set the transistor's drive and control
Recovery means
Not applicable
Measured by
Set by lithography and etch and verified electrically through drive current, subthreshold slope, and short-channel control

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Nearby constructs

analogy4 fields · 4 citationsjingle · one word, four constructsarray3 fields · 4 citationsjingle · one word, three constructsbase3 fields · 4 citationsjingle · one word, three constructs

References

  1. Hisamoto, D., Lee, W.-C., Kedzierski, J., Takeuchi, H., Asano, K., Kuo, C., Anderson, E., King, T.-J., Bokor, J., & Hu, C. (2000). FinFET: A self-aligned double-gate MOSFET scalable to 20 nm. IEEE Transactions on Electron Devices, 47(12), 2320–2325. https://doi.org/10.1109/16.887014

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