Construct · 1 fields · 2 citations

latch-up: a standalone construct

One name. One construct. A landmark on the map.

● anchor · one construct, one field Nearest construct by meaning·not indexed
latch-up1 CONSTRUCTLatch-upGREGORY · CMOS LATCH-UP

A single standalone construct; nearby constructs are located against it in the Collider. Tap a field for its definition, unit, and measures.

CMOS circuit reliability

A parasitic thyristor shorts power to ground

Latch-up is a failure mode of CMOS integrated circuits in which the parasitic bipolar transistors inherent in the n- and p-type regions form a four-layer thyristor that, once triggered, switches into a self-sustaining low-impedance state shorting the supply to ground. Gregory and Shafer's 1973 Latch-up in CMOS integrated circuits identified the mechanism, and Estreich and Dutton's 1982 modeling work quantified the trigger conditions and holding behaviour. The referent is a parasitic regenerative conduction state that can destroy a chip unless current is removed, characterised by its trigger and holding currents and designed against through guard rings and substrate contacts.[1][2]

Unit
The trigger and holding currents of the parasitic thyristor
Recovery means
The latched state clears only when supply current is interrupted or drops below the holding current; sustained latch-up can permanently damage the device
Measured by
Characterised by trigger-current and holding-current tests and by injection and supply-overvoltage stressing per qualification standards

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Nearby constructs

current3 fields · 6 citationsjingle · one word, three constructsfailure4 fields · 6 citationsjingle · one word, four constructs

References

  1. Gregory, B. L., & Shafer, B. D. (1973). Latch-up in CMOS integrated circuits. IEEE Transactions on Nuclear Science, 20(6), 293–299. https://doi.org/10.1109/TNS.1973.4327410
  2. Estreich, D. B., & Dutton, R. W. (1982). Modeling latch-up in CMOS integrated circuits. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1(4), 157–162. https://doi.org/10.1109/TCAD.1982.1270006

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