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percolation model of oxide breakdown: a standalone construct

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percolation modelof oxide breakdown1 CONSTRUCTPercolation model ofDEGRAEVE · MICROELECTRONICS

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Microelectronics reliability

an account of gate oxide breakdown as the moment randomly generated traps form a connected path across the insulator, predicting Weibull statistics.

In microelectronics reliability, percolation model of oxide breakdown refers to an account of gate oxide breakdown as the moment randomly generated traps form a connected path across the insulator, predicting Weibull statistics. This meaning comes from Degraeve (1998) in IEEE Transactions on Electron Devices.[1]

Unit
Recovery means
Measured by

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breakdown3 fields · 6 citationsjingle · one word, three constructsform4 fields · 7 citationsjingle · one word, four constructsgate5 fields · 6 citationsjingle · one word, five constructs

References

  1. Degraeve, R., Groeseneken, G., Bellens, R., Ogier, J. L., Depas, M., Roussel, P. J., & Maes, H. E. (1998). New insights in the relation between electron trap generation and the statistical properties of oxide breakdown. IEEE Transactions on Electron Devices, 45(4), 904-911. https://doi.org/10.1109/16.662800

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