Construct · 1 fields · 1 citations

random telegraph noise: a standalone construct

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randomtelegraph noise1 CONSTRUCTRandom telegraph noiseRALLS · SEMICONDUCTOR DEVICE

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Semiconductor device physics

discrete switching of a small device's current between levels as single charge traps capture and release carriers.

In semiconductor device physics, random telegraph noise refers to discrete switching of a small device's current between levels as single charge traps capture and release carriers. This meaning comes from Ralls (1984) in Physical Review Letters.[1]

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Nearby constructs

capture4 fields · 4 citationsjingle · one word, four constructscharge1 fields · 2 citationsanchor · a standalone constructcurrent3 fields · 6 citationsjingle · one word, three constructs

References

  1. Ralls, K. S., Skocpol, W. J., Jackel, L. D., Howard, R. E., Fetter, L. A., Epworth, R. W., & Tennant, D. M. (1984). Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (1f?) Noise. Physical Review Letters, 52(3), 228-231. https://doi.org/10.1103/physrevlett.52.228

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