Construct · 1 fields · 1 citations

stress-induced leakage current: a standalone construct

One name. One construct. A landmark on the map.

● anchor · a standalone construct Nearest construct by meaning·not indexed

A single standalone construct; nearby constructs are located against it in the Collider. Tap a field for its definition, unit, and measures.

Microelectronics reliability

increased low-field leakage through a thin gate oxide after high-field electrical stress, attributed to trap-assisted tunneling.

In microelectronics reliability, stress-induced leakage current refers to increased low-field leakage through a thin gate oxide after high-field electrical stress, attributed to trap-assisted tunneling. This meaning comes from Maserjian (1982) in Journal of Applied Physics.[1]

Unit
Recovery means
Measured by

Run it through the Collider, or take the citations with you.

See how stress-induced leakage current sits against neighbouring constructs in the Collider, or export every reference on this page in one click.

Open in Collider Export BibTeX Report this entry

Nearby constructs

current3 fields · 6 citationsjingle · one word, three constructs gate5 fields · 6 citationsjingle · one word, five constructs leakage3 fields · 4 citationsjingle · one word, three constructs

References

Maserjian, J., & Zamani, N. (1982). Behavior of the Si/SiO2 interface observed by Fowler-Nordheim tunneling. Journal of Applied Physics, 53(1), 559-567. https://doi.org/10.1063/1.329919

Cited on this page?

Confirm your construct, or correct us.

If your work is cited behind one of these entries, you know better than we do whether we captured the meaning right. Confirm it, suggest an edit, or dispute it, and your name goes on the entry as an author who has checked it, linked to your ORCID.

Claim your construct