Construct · 1 fields · 1 citations

time-dependent dielectric breakdown: a standalone construct

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Semiconductor devices

the wear-out failure of a gate insulator under constant field after a delay, modeled as field-driven thermochemical bond breakage.

In semiconductor devices, time-dependent dielectric breakdown refers to the wear-out failure of a gate insulator under constant field after a delay, modeled as field-driven thermochemical bond breakage. This meaning comes from McPherson (1998) in Journal of Applied Physics.[1]

Unit
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Measured by

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Nearby constructs

bond2 fields · 2 citationsjingle · one word, two constructs breakdown3 fields · 6 citationsjingle · one word, three constructs constant2 fields · 2 citationsjingle · one word, two constructs

References

McPherson, J. W., & Mogul, H. C. (1998). Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin films. Journal of Applied Physics, 84(3), 1513-1523. https://doi.org/10.1063/1.368217

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