Construct · 1 fields · 1 citations

bias stress instability: a standalone construct

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Semiconductor devices

a gradual shift in thin-film transistor threshold voltage under prolonged gate bias, from charge trapping and defect creation.

In semiconductor devices, bias stress instability refers to a gradual shift in thin-film transistor threshold voltage under prolonged gate bias, from charge trapping and defect creation. This meaning comes from Powell (1989) in Applied Physics Letters.[1]

Unit
Recovery means
Measured by

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Nearby constructs

bias6 fields · 8 citationsjingle · one name, six constructs charge1 fields · 2 citationsanchor · a standalone construct defect4 fields · 7 citationsjingle · one word, four constructs

References

Powell, M. J., van Berkel, C., & Hughes, J. R. (1989). Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors. Applied Physics Letters, 54(14), 1323-1325. https://doi.org/10.1063/1.100704

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